Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories PDF Books

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Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories

Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories
Author: Milan Pesic
Publisher: BoD – Books on Demand
ISBN: 3744867889
Size: 13.32 MB
Format: PDF
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The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
Gate Stack Engineering for Emerging Polarization based Non-volatile Memories
Language: en
Pages: 152
Authors: Milan Pesic
Categories: Technology & Engineering
Type: BOOK - Published: 2017-07-14 - Publisher: BoD – Books on Demand
The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast
Herstellung ultra-dünner hoch-εr Oxide und deren Verhalten unter dynamischen elektrischen Stressbedingungen
Language: de
Pages: 165
Authors: Steve Knebel
Categories: Technology & Engineering
Type: BOOK - Published: 2019-10-08 - Publisher: Logos Verlag Berlin GmbH
Im Rahmen dieser Arbeit werden HfO2 und ZrO2 basierte hoch-εr Materialsysteme mit ihrer jeweiligen Anwendung als Gateoxid bzw. DRAM Isolalationsschicht untersucht. Es werden alternative dielektrische Schichten für Speicherkondensatoren diskutiert und Alternativen zum ZrO2/Al2O3/ZrO2 (ZAZ) Schichtstapel untersucht. Neben ZAZ, wurden Schichtstapel mit SrO oder Sc2O3 Zwischenschicht abgeschieden und strukturell und elektrisch
Ferroelectricity in Doped Hafnium Oxide
Language: en
Pages: 570
Authors: Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo
Categories: Technology & Engineering
Type: BOOK - Published: 2019-03-27 - Publisher: Woodhead Publishing
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including
Non-volatile Ferroelectric Transistor Based Memory Design
Language: en
Pages:
Authors: Sandeep Thirumala
Categories: Technology & Engineering
Type: BOOK - Published: 2018 - Publisher:
Ferroelectric Field Effect Transistors (FEFETs) are emerging devices which have immense potential to replace conventional transistors due to their unique characteristics. They are realized by employing a ferroelectric in the gate stack of transistors with an optional metal layer in between the ferroelectric and dielectric. FEFETs can behave as volatile
Rechnerarchitektur : Von der digitalen Logik zum Parallelrechner
Language: de
Pages: 800
Authors: Andrew S. Tanenbaum, Todd Austin
Categories: Technology & Engineering
Type: BOOK - Published: 2014 - Publisher:
Books about Rechnerarchitektur : Von der digitalen Logik zum Parallelrechner
Electrical & Electronics Abstracts
Language: en
Pages:
Authors: Andrew S. Tanenbaum, Todd Austin
Categories: Electric engineering
Type: BOOK - Published: 1997 - Publisher:
Books about Electrical & Electronics Abstracts
TALES OF SCIENCE
Language: de
Pages: 148
Authors: Moustafa Nawito, Cathrina Flum, Thomas Burghardt, Fritz Schlicher, Christine Ruffert, Patrick F. Schneider, Nicolai Simon, Estera Grelle, Thomas Stieglitz
Categories: Fiction
Type: BOOK - Published: 2020-02-15 - Publisher: p.machinery
Was passiert, wenn man Wissenschaftler dazu auffordert, Science-Fiction-Kurzgeschichten zu verfassen? Kann diese Sorte Mensch, die es gewohnt ist, Fachartikel zu verfassen, auch fiktive Texte zu Papier bringen? Kein noch so gewiefter Autor ist an den Zukunftsthemen so nah dran, wie eben jene Wissenschaftler, die sich auf dem Bereich der Mikrosystemtechnik
Die akademische
Language: de
Pages: 451
Authors: Andrea Albrecht, Lutz Danneberg, Simone De Angelis
Categories: History
Type: BOOK - Published: 2017-04-10 - Publisher: Walter de Gruyter GmbH & Co KG
Die "Achse Berlin-Rom" war mehr als ein politisch-militärisches Projekt, sie erstreckte sich auf alle Bereiche der Gesellschaft. Wissenschaft und Kunst machten keine Ausnahme. Auch hier entstanden intensive Beziehungen, deren Wurzeln bis in die 1920er Jahre zurückreichten. Zahlreiche Intellektuelle beteiligten sich an dieser akademischen "Achse" zwischen Italien und Deutschland – unter
Die Rechenmaschine und das Gehirn
Language: de
Pages: 77
Authors: John von Neumann
Categories: Computers
Type: BOOK - Published: 2014-12-11 - Publisher: Walter de Gruyter GmbH & Co KG
"The Computer and the Brain" war der Titel von John von Neumanns letzter hinterlassener Arbeit, in der er den wechselseitigen Beziehungen zwischen der Rechenmaschine und dem menschlichen Denk- und Nervensystem nachgeht. Diese Arbeit gibt ein zusammengefaßtes Zeugnis seiner eindringlichen und unorthodoxen Denkweise. John von Neumann gilt heute als einer der
OECD Wirtschaftsausblick, Ausgabe 1996/2
Language: en
Pages: 248
Authors: OECD
Categories: Computers
Type: BOOK - Published: 1997-01-02 - Publisher: OECD Publishing
Books about OECD Wirtschaftsausblick, Ausgabe 1996/2